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ABSTRACT
A light-emitting diode (LED) is a two-lead semiconductor light source. It is a basic pn-junction diode, which emits light when activated. When a fitting voltage is applied to the leads, electrons are able to recombine with electron holes within the device, releasing energy in the form of photons.
Light emitting diode offers well-described benefits, compared with conventional light microscopy,. However, its use in resource-limited settings has been limited by the high cost of the excitatory light source, using light-emitting diode (LED) technology as an alternative to the conventional mercury vapor lamp (MVP) because of its efficiency.
TABLE OF CONTENTS
COVER PAGE
TITLE PAGE
APPROVAL PAGE
DEDICATION
ACKNOWLEDGEMENT
ABSTRACT
CHAPTER ONE
1.0 INTRODUCTION
1.1 BACKGROUND OF THE PROJECT
- AIM OF THE PROJECT
- OBJECTIVE OF THE PROJECT
- SIGNIFICANCE OF THE PROJECT
- LIMITATION OF THE PROJECT
- APPLICATION OF LED
- SCOPE OF THE PROJECT
CHAPTER TWO
LITERATURE REVIEW
- HISTORICAL BACKGROUND OF LIGHT EMITTING DIODE
- REVIEW OF COMMERCIAL DEVELOPMENT OF AN LED
- REVIEW OF BLUE AND WHITE LED
CHAPTER THREE
3.0 CONSTRUCTION METHODOLOGY
3.1 EFFICIENT USE OF LIGHT EMITTING DIODE
3.2 CONSIDERATIONS FOR USE
3.3 ADVANTAGES OF USING LIGHT EMITTING DIODE
CHAPTER FOUR
- ADVANTAGES OF USING LIGHT EMITTING DIODE
- DISADVANTAGES OF USING LIGHT EMITTING DIODE
- LED LIFETIME AND FAILURE OF LED
CHAPTER FIVE
- CONCLUSION
- RECOMMENDATION
- REFERENCES
CHAPTER ONE
1.0 INTRODUCTION
1.1 BACKGROUND OF THE STUDY
A light-emitting diode (LED) is a two-lead semiconductor light source. It is a basic pn-junction diode, which emits light when activated. When a fitting voltage is applied to the leads, electrons are able to recombine with electron holes within the device, releasing energy in the form of photons. This effect is called electroluminescence, and the color of the light (corresponding to the energy of the photon) is determined by the energy band gap of the semiconductor.
An LED is often small in area (less than 1 mm2) and integrated optical components may be used to shape its radiation pattern.
Appearing as practical electronic components in 1962, the earliest LEDs emitted low-intensity infrared light. Infrared LEDs are still frequently used as transmitting elements in remote-control circuits, such as those in remote controls for a wide variety of consumer electronics. The first visible-light LEDs were also of low intensity, and limited to red. Modern LEDs are available across the visible, ultraviolet, and infrared wavelengths, with very high brightness.
Early LEDs were often used as indicator lamps for electronic devices, replacing small incandescent bulbs. They were soon packaged into numeric readouts in the form of seven-segment displays, and were commonly seen in digital clocks.
Recent developments in LEDs permit them to be used in environmental and task lighting. LEDs have many advantages over incandescent light sources including lower energy consumption, longer lifetime, improved physical robustness, smaller size, and faster switching. Light-emitting diodes are now used in applications as diverse as aviation lighting, automotive headlamps, advertising, general lighting, traffic signals, and camera flashes. However, LEDs powerful enough for room lighting are still relatively expensive, and require more precise current and heat management than compact fluorescent lamp sources of comparable output.
LEDs have allowed new text, video displays, and sensors to be developed, while their high switching rates are also useful in advanced communications technology.
1.2 OBJECTIVE OF THE STUDY
This work focuses on the effective way light emitting diode can be useful both home and industries
1.3 SIGNIFICANCE OF THE STUDY
A significant difference from other light sources is that the light is more directional, i.e., emitted as a narrower beam. LED lamps are used for both general and special-purpose lighting. Where colored light is needed, LEDs that inherently emit light of a single color require no energy-absorbing filters.
White-light LED lamps have longer life expectancy and higher efficiency (more light for the same electricity) than most other lighting when used at the proper temperature. LED sources are compact, which gives flexibility in designing lighting fixtures and good control over the distribution of light with small reflectors or lenses. Because of the small size of LEDs, control of the spatial distribution of illumination is extremely flexible and the light output and spatial distribution of an LED array can be controlled with no efficiency loss.
LEDs using the color-mixing principle can emit a wide range of colors by changing the proportions of light generated in each primary color. This allows full color mixing in lamps with LEDs of different colors. Unlike other lighting technologies, LED emission tends to be directional which can be either advantageous or disadvantageous, depending on requirements. For applications where non-directional light is required, either a diffuser is used, or multiple individual LED emitters are used to emit in different directions.
1.4 LIMITATION OF THE STUDY
LED efficiency and life span drop at higher temperatures, which limits the power that can be used in lamps that physically replace existing filament and compact fluorescent types. Thermal management of high-power LEDs is a significant factor in design of solid state lighting equipment.
LED lamps are sensitive to excessive heat, like most solid state electronic components. LED lamps should be checked for compatibility for use in totally or partially enclosed fixtures before installation since heat build-up could cause lamp failure and/or fire.
LED lamps may flicker. The extent of flicker is based on the quality of the DC power supply built into the lamp structure, usually located in the lamp base.
Depending on the design of the lamp, the LED lamp may be sensitive to electrical surges This is generally not an issue with incandescents, but can be an issue with LED and compact fluorescent bulbs. Power circuits that supply LED lamps can be protected from electrical surges through the use of surge protection devices.
The long life of LEDs, expected to be about 50 times that of the most common incandescent bulbs and significantly longer than fluorescent types, is advantageous for users but will affect manufacturers as it reduces the market for replacements in the distant future.
1.5 APPLICATION OF LED
Some of the important applications of LED are given below:
- It is used in optical switching application.
- It is used in burglar alarm system.
- It is used for indicating power ON/OFF conditions, power level indicators or stereo amplifiers.
- It is used in image sensing circuits in videophones.
- It is used in optical communication system.
- It is used for checking the linearity, speed etc. of opto-electronic detection circuits.
- It is used in motorcycle and bicycle lights.
- It is used in traffic lights and signals.
1.6 SCOPE OF THE PROJECT
Light-emitting diodes (LEDs) are solid state, robust, very long-lived lights. They can also be designed to emit pure, selectable colors. What’s more, the efficiency of converting electricity to light is improving rapidly as the LED industry evolves, so LEDs are becoming more energy efficient all the time
CHAPTER TWO
2.0 LITERATURE REVIEW
2.1 HISTORICAL BACKGROUND OF LIGHT EMITTING DIODE
Discoveries And Early Devices
Green electroluminescence from a point contact on a crystal of SiC recreates H. J. Round’s original experiment from 1907.
Electroluminescence as a phenomenon was discovered in 1907 by the British experimenter H. J. Round of Marconi Labs, using a crystal of silicon carbide and a cat’s-whisker detector. Russian inventor Oleg Losev reported creation of the first LED in 1927. His research was distributed in Russian, German and British scientific journals, but no practical use was made of the discovery for several decades. Rubin Braunstein of the Radio Corporation of America reported on infrared emission from gallium arsenide (GaAs) and other semiconductor alloys in 1955. Braunstein observed infrared emission generated by simple diode structures using gallium antimonide (GaSb), GaAs, indium phosphide (InP), and silicon-germanium (SiGe) alloys at room temperature and at 77 kelvins.
In 1957, Braunstein further demonstrated that the rudimentary devices could be used for non-radio communication across a short distance. As noted by Kroemer Braunstein” had set up a simple optical communications link: Music emerging from a record player was used via suitable electronics to modulate the forward current of a GaAs diode. The emitted light was detected by a PbS diode some distance away. This signal was fed into an audio amplifier, and played back by a loudspeaker. Intercepting the beam stopped the music.
In the fall of 1961, while working at Texas Instruments Inc. in Dallas, TX, James R. Biard and Gary Pittman found that gallium arsenide (GaAs) emitted infrared light when electric current was applied. On August 8, 1962, Biard and Pittman filed a patent titled “Semiconductor Radiant Diode” based on their findings, which described a zinc diffused p–n junction LED with a spaced cathode contact to allow for efficient emission of infrared light under forward bias.
After establishing the priority of their work based on engineering notebooks predating submissions from G.E. Labs, RCA Research Labs, IBM Research Labs, Bell Labs, and Lincoln Lab at MIT, the U.S. patent office issued the two inventors the first patent for the infrared (IR) light-emitting diode (U.S. Patent US3293513), the first modern LED. Immediately after filing the patent, Texas Instruments began a project to manufacture infrared diodes. In October 1962 they announced the first LED commercial product (the SNX-100), which employed a pure GaAs crystal to emit a 900 nm output.
The first visible-spectrum (red) LED was developed in 1962 by Nick Holonyak, Jr., while working at General Electric Company. Holonyak first reported this breakthrough in the journal Applied Physics Letters on the December 1, 1962. M. George Craford, a former graduate student of Holonyak, invented the first yellow LED and improved the brightness of red and red-orange LEDs by a factor of ten in 1972. In 1976, T. P. Pearsall created the first high-brightness, high-efficiency LEDs for optical fiber telecommunications by inventing new semiconductor materials specifically adapted to optical fiber transmission wavelengths.
2.2 REVIEW OF COMMERCIAL DEVELOPMENT OF AN LED
The first commercial LEDs were commonly used as replacements for incandescent and neon indicator lamps, and in seven-segment displays, first in expensive equipment such as laboratory and electronics test equipment, then later in such appliances as TVs, radios, telephones, calculators, as well as watches (see list of signal uses). Until 1968, visible and infrared LEDs were extremely costly, in the order of US$200 per unit, and so had little practical use. The Monsanto Company was the first organization to mass-produce visible LEDs, using gallium arsenide phosphide (GaAsP) in 1968 to produce red LEDs suitable for indicators. Hewlett Packard (HP) introduced LEDs in 1968, initially using GaAsP supplied by Monsanto. These red LEDs were bright enough only for use as indicators, as the light output was not enough to illuminate an area. Readouts in calculators were so small that plastic lenses were built over each digit to make them legible. Later, other colors became widely available and appeared in appliances and equipment. In the 1970s commercially successful LED devices at less than five cents each were produced by Fairchild Optoelectronics. These devices employed compound semiconductor chips fabricated with the planar process invented by Dr. Jean Hoerni at Fairchild Semiconductor. The combination of planar processing for chip fabrication and innovative packaging methods enabled the team at Fairchild led by optoelectronics pioneer Thomas Brandt to achieve the needed cost reductions. These methods continue to be used by LED producers.
LED display of a TI-30 scientific calculator (ca. 1978), which uses plastic lenses to increase the visible digit size
As LED materials technology grew more advanced, light output rose, while maintaining efficiency and reliability at acceptable levels. The invention and development of the high-power white-light LED to use for illumination, and is slowly replacing incandescent and fluorescent lighting (see list of illumination applications).
Most LEDs were made in the very common 5 mm T1¾ and 3 mm T1 packages, but with rising power output, it has grown increasingly necessary to shed excess heat to maintain reliability, so more complex packages have been adapted for efficient heat dissipation. Packages for state-of-the-art high-power LEDs bear little resemblance to early LEDs.
2.3 REVIEW OF BLUE AND WHITE LED
The first high-brightness blue LED was demonstrated by Shuji Nakamura of Nichia Corporation in 1994 and was based on InGaN.[ Its development built on critical developments in GaN nucleation on sapphire substrates and the demonstration of p-type doping of GaN, developed by Isamu Akasaki and Hiroshi Amano in Nagoya. In 1995, Alberto Barbieri at the Cardiff University Laboratory (GB) investigated the efficiency and reliability of high-brightness LEDs and demonstrated a “transparent contact” LED using indium tin oxide (ITO) on (AlGaInP/GaAs). The existence of blue LEDs and high-efficiency LEDs quickly led to the development of the first white LED, which employed a Y
12:Ce, or “YAG”, phosphor coating to mix down-converted yellow light with blue to produce light that appears white. Nakamura was awarded the 2006 Millennium Technology Prize for his invention. Akasaki, Amano, and Nakamura were awarded the 2014 Nobel prize in physics for the invention of the blue LED.
The development of LED technology has caused their efficiency and light output to rise exponentially, with a doubling occurring approximately every 36 months since the 1960s, in a way similar to Moore’s law. This trend is generally attributed to the parallel development of other semiconductor technologies and advances in optics and material science, and has been called Haitz’s law after Dr. Roland Haitz.
In 2001[37] and 2002, processes for growing gallium nitride (GaN) LEDs on silicon were successfully demonstrated. In January 2012, Osram demonstrated high-power InGaN LEDs grown on silicon substrates commercially. It has been speculated that the use of six-inch silicon wafers instead of two-inch sapphire wafers and epitaxy manufacturing processes could reduce production costs by up to 90%.
Physics
The LED consists of a chip of semiconducting material doped with impurities to create a p-n junction. As in other diodes, current flows easily from the p-side, or anode, to the n-side, or cathode, but not in the reverse direction. Charge-carriers—electrons and holes—flow into the junction from electrodes with different voltages. When an electron meets a hole, it falls into a lower energy level and releases energy in the form of a photon.
The wavelength of the light emitted, and thus its color, depends on the band gap energy of the materials forming the p-n junction. In silicon or germanium diodes, the electrons and holes usually recombine by a non-radiative transition, which produces no optical emission, because these are indirect band gap materials. The materials used for the LED have a direct band gap with energies corresponding to near-infrared, visible, or near-ultraviolet light.
LED development began with infrared and red devices made with gallium arsenide. Advances in materials science have enabled making devices with ever-shorter wavelengths, emitting light in a variety of colors.
LEDs are usually built on an n-type substrate, with an electrode attached to the p-type layer deposited on its surface. P-type substrates, while less common, occur as well. Many commercial LEDs, especially GaN/InGaN, also use sapphire substrate.
Most materials used for LED production have very high refractive indices. This means that much light will be reflected back into the material at the material/air surface interface. Thus, light extraction in LEDs is an important aspect of LED production, subject to much research and development.
Refractive index
Idealized example of light emission cones in a semiconductor, for a single point-source emission zone. The left illustration is for a fully translucent wafer, while the right illustration shows the half-cones formed when the bottom layer is fully opaque. The light is actually emitted equally in all directions from the point-source, so the areas between the cones shows the large amount of trapped light energy that is wasted as heat.
The light emission cones of a real LED wafer are far more complex than a single point-source light emission. The light emission zone is typically a two-dimensional plane between the wafers. Every atom across this plane has an individual set of emission cones. Drawing the billions of overlapping cones is impossible, so this is a simplified diagram showing the extents of all the emission cones combined. The larger side cones are clipped to show the interior features and reduce image complexity; they would extend to the opposite edges of the two-dimensional emission plane.
Bare uncoated semiconductors such as silicon exhibit a very high refractive index relative to open air, which prevents passage of photons arriving at sharp angles relative to the air-contacting surface of the semiconductor. This property affects both the light-emission efficiency of LEDs as well as the light-absorption efficiency of photovoltaic cells. The refractive index of silicon is 3.96 (590 nm), while air is 1.0002926.
In general, a flat-surface uncoated LED semiconductor chip will emit light only perpendicular to the semiconductor’s surface, and a few degrees to the side, in a cone shape referred to as the light cone, cone of light, or the escape cone.[ The maximum angle of incidence is referred to as the critical angle. When this angle is exceeded, photons no longer escape the semiconductor but are instead reflected internally inside the semiconductor crystal as if it were a mirror.
Internal reflections can escape through other crystalline faces, if the incidence angle is low enough and the crystal is sufficiently transparent to not re-absorb the photon emission. But for a simple square LED with 90-degree angled surfaces on all sides, the faces all act as equal angle mirrors. In this case most of the light can not escape and is lost as waste heat in the crystal
A convoluted chip surface with angled facets similar to a jewel or fresnel lens can increase light output by allowing light to be emitted perpendicular to the chip surface while far to the sides of the photon emission point.
The ideal shape of a semiconductor with maximum light output would be a microsphere with the photon emission occurring at the exact center, with electrodes penetrating to the center to contact at the emission point. All light rays emanating from the center would be perpendicular to the entire surface of the sphere, resulting in no internal reflections. A hemispherical semiconductor would
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